CVE-ID

CVE-2021-42114

• CVSS Severity Rating • Fix Information • Vulnerable Software Versions • SCAP Mappings • CPE Information
Description
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
References
Note: References are provided for the convenience of the reader to help distinguish between vulnerabilities. The list is not intended to be complete.
Assigning CNA
Switzerland National Cyber Security Centre (NCSC)
Date Record Created
20211008 Disclaimer: The record creation date may reflect when the CVE ID was allocated or reserved, and does not necessarily indicate when this vulnerability was discovered, shared with the affected vendor, publicly disclosed, or updated in CVE.
Phase (Legacy)
Assigned (20211008)
Votes (Legacy)
Comments (Legacy)
Proposed (Legacy)
N/A
This is an record on the CVE List, which provides common identifiers for publicly known cybersecurity vulnerabilities.